5
CGH55030F2_P2 Rev 3.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright ? 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Source and Load Impedances
Frequency (MHz)
Z Source
Z Load
5500
8.0 – j12.4
14.1 – j12.6
5650
8.7 - j13.1
14.7 – j11.7
5800
8.4 - j14.0
15.4 – j11.0
Note 1. VDD
= 28V, I
DQ
= 250 mA in the 440166 package.
Note 2. Impedances are extracted from the CGH55030-TB demonstration
amplifer and are not source and load pull data derived from the transistor.
CGH55030F2 and CGH55030P2 Power Dissipation De-rating Curve
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
D
Z Source
Z Load
G
S
20
25
30
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
(
W
)
CGH40025F CW Power Dissipation De-rating Curve
0
5
10
15
0 25 50 75 100 125 150 175 200 225 250
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
(
W
)
Maximum Case Temperature (°C)
Note 1
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